2QD0535T33-C-xx is a high power, dual-channel compact gate driver core designed for high reliability applications based on the ASIC chipset developed by Bronze Technologies.
2QD0535T33-C-xx can be used for IGBT modules with a blocking voltage up to 3300V. It can be applied to various topologies by adding proper peripheral circuitry.
Engergy storage converters |
Wind power converters |
PV inverters |
General purpose MV inverters |
Dual-channel IGBT gate driver core |
Blocking voltage up to 3300V |
Peak current ±35A, 5W output power per channel |
Up to 10000V isolation voltage |
Direct/half-bridge mode available |
Primary/secondary side undervoltage lockout |
IGBT short-circuit protection integrated |
Advanced active clamping integrated |
Soft shut down integrated |
| Maximum Voltage of Power Device | 3300V | Maximum Switching Frequency | 100kHz |
| Turn-ON Voltage | 15V | Turn-OFF Voltage | -10V |
| Driving Power | 5W | Gate Driving Current | ±35A |
| Power Supply Voltage | 15V | Maximum Supply Current | 833mA |
| Operating Temperature | -40~+85℃ | Primary and Secondary Side Insulation Voltage | 9100Vac |
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Typical Applications
Features
Key parameters
