In recent years, as SiC technology gradually matures, industry demand for SiC power devices is tending towards diversification, integration, and lightweight solutions. SiC power devices possess outstanding characteristics including extremely low gate charge, low on-resistance, high switching speed, and high temperature tolerance, enabling them to operate at high switching frequencies. Consequently, the use of SiC power devices contributes to reducing power losses, increasing power density, and enhancing system conversion efficiency.

In response to market demand for SiC power devices, Bronze Technologies has designed a dual-channel compact driver core 2CD0205T12-ABC based on an optocoupler isolation. This device is suitable for applications with limited space, medium-to-low voltage, and high reliability requirement. It simplifies customers' external circuitry design, facilitating rapid development iteration, production, installation, and operation.

Typical Applications

Energy Storage Converters

Product Features

Dual-channel SiC MOSFET driver core

Maxium power devices voltage: 1200V

Single-channel driving power: 2W, peak current ±5A

Compatible with SiC discrete-device in TO-247 package

Compact design: 29mm × 35mm × 11mm (Housing: 33.4mm × 39.4mm × 14mm)

2.0mm pin header interface input/output

Isolation voltage up to 5000V

Isolated DC/DC power supply

Secondary undervoltage lockout

Miller clamp

VDS short-circuit protection

Soft shutdown

PWM interlock